| PART |
Description |
Maker |
| MX25L25635E MX25L25635EMI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MB81EDS256445 |
MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM5225165BTT-75 HM5225405BTT-75 HM5225805BTT-75 HM |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ??16-bit ??4-bank/8-Mword ??8-bit ??4-bank /16-Mword ??4-bit ??4-bank PC/133, PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz4 Mword16位4-bank/8-Mword位4银行/ 16 Mword4位4银行PC/133，电 100内存
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位银行PC/133，电 100内存
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword16位-bank/8-Mword位银行/ 16 Mword位银行PC/133，电 100内存
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Ultra-High-Precision SOT23 Series Voltage Reference
POT 5K OHM 9MM HORZ NO BUSHING
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30
Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:18-11
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
POT 20K OHM 9MM HORZ NO BUSHING
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
http://
|
| M38037M6-122FP M38037M6-133FP M38037M6-154FP M3803 |
RAM size: 2048bytes single chip 8-bit CMOS microcomputer
RAM size: 1536bytes single chip 8-bit CMOS microcomputer
RAM size: 768bytes single chip 8-bit CMOS microcomputer
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
3803/04 Group: General Purpose, with Flash
RAM size: 256bytes single chip 8-bit CMOS microcomputer
RAM size: 640bytes single chip 8-bit CMOS microcomputer
RAM size: 896bytes single chip 8-bit CMOS microcomputer
RAM size: 512bytes single chip 8-bit CMOS microcomputer
RAM size: 384bytes single chip 8-bit CMOS microcomputer
RAM size: 1024bytes single chip 8-bit CMOS microcomputer
RAM size: 3804bytes single chip 8-bit CMOS microcomputer
RAM size: 192bytes single chip 8-bit CMOS microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
DRAM
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYB25DC256160C |
(HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
| HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M
32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
| UPD23C256112AGY-XXX-MKH 23C256 UPD23C256112A UPD23 |
NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM
|
NEC[NEC]
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| SAB-C509-LM SAF-C509-L SAFC509-L SAF-C509-LM Q6712 |
8-Bit CMOS Microcontroller 8位CMOS微控制器
8-Bit CMOS Microcontroller 8-BIT, 16 MHz, MICROCONTROLLER, PQFP100
High Speed CMOS Logic Quad 2-Input Multiplexers with Non-Inverting 3-State Outputs 16-SOIC -55 to 125
DBMM25SN
|
Infineon Technologies A...
SIEMENS AG
Infineon Technologies AG
|
